Using Adachi’s expression [S. Adachi, Phys. Rev. B 43, 12 316 (1991)] for the complex dielectric function of amorphous semiconductors, we fit out experimental results [M. Fried et al., J. Appl. Phys. 71, 5260 (1992)] for two different types (self-implanted and implanted-annealed or relaxed) of amorphous silicon. The complex dielectric functions were determined by spectroscopic ellipsometric measurements in the visible wavelength region. The fit resulted in different optical band gap (Eg) and damping (or broadening, Γ) energies. Eg is lower and Γ is higher in implanted a-Si. Both changes can be interpreted by the presence of more structural disorder point defects in implanted a-Si compared with relaxed a-Si.
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机译:使用足立的表情[S.足立区Rev. B 43,12 316(1991)]对于非晶半导体的复数介电功能,我们拟合了实验结果[M. Fried等,J.Appl。物理71,5260(1992)]中介绍了两种不同类型的非晶硅(自植入和植入退火或松弛)。通过在可见光波长区域中的椭圆偏振光谱测量来确定复数介电函数。拟合导致不同的光学带隙(Eg)和阻尼(或展宽,Γ)能量。在注入的非晶硅中,例如,较低,而Γ较高。与松弛的a-Si相比,植入的a-Si中存在更多的结构无序点缺陷,可以解释这两种变化。
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